Kingston 9965525-155.A00LF 8GB vs G Skill Intl F4-2800C16-8GRK 8GB

总分

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

差异规格评论

差异

Kingston 9965525-155.A00LF 8GB

需要考虑的原因
Kingston 9965525-155.A00LF 8GB

报告一个错误

G Skill Intl F4-2800C16-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GRK 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 69

左右 -77% 更低的延时
更快的读取速度，GB/s

14 6.4

测试中的平均数值
更快的写入速度，GB/s

10.5 3.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-2800C16-8GRK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 39
读取速度，GB/s

6.4 14.0
写入速度，GB/s

3.7 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1129 2834

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C17-4GVK 4GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology 18ADF2G72AZ-2G3A1 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Corsair CMK8GX4M1Z3200C16 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB