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Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB

Kingston 9965525-155.A00LF 8GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
G Skill Intl F4-4000C17-8GTZRB 8GB 需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 69
    左右 -176% 更低的延时
  • 更快的读取速度，GB/s
    21 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.4 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 25
  • 读取速度，GB/s
    6.4 left arrow 21.0
  • 写入速度，GB/s
    3.7 left arrow 19.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 4129

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Panram International Corporation PUD42400C168GVS 8GB
内存RAM
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Micron Technology 8JSF25664HZ-1G4D1 2GB
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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