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Kingston 99U5315-023.A00LF 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
比较
Kingston 99U5315-023.A00LF 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
总分
Kingston 99U5315-023.A00LF 512MB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5315-023.A00LF 512MB
报告一个错误
更快的读取速度,GB/s
4
15.2
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
44
左右 -63% 更低的延时
更快的写入速度,GB/s
10.2
1,769.9
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Kingston 99U5315-023.A00LF 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
44
27
读取速度,GB/s
4,482.7
15.2
写入速度,GB/s
1,769.9
10.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
525
2764
Kingston 99U5315-023.A00LF 512MB RAM的比较
Kingston 99U5316-028.A00LF 1GB
G Skill Intl F4-3800C14-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB RAM的比较
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KF560C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMD16GX4M4B3400C16 4GB
Kingston 99U5471-020.A00LF 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Kingston K531R8-MIN 4GB
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AMD R538G1601U2S-UO 8GB
Corsair CMW64GX4M8C3466C16 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.D2GG7.AU30B 16GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK16GX4M2B2800C14 8GB
Kingston 9905469-143.A00LF 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMU32GX4M4C3466C16 8GB
报告一个错误
×
Bug description
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