Kingston 99U5403-036.A00G 4GB vs Corsair CMW16GX4M2C3200C16 8GB

总分

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分

Corsair CMW16GX4M2C3200C16 8GB

Corsair CMW16GX4M2C3200C16 8GB

差异规格评论

差异

Kingston 99U5403-036.A00G 4GB

需要考虑的原因
Kingston 99U5403-036.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Corsair CMW16GX4M2C3200C16 8GB

需要考虑的原因
Corsair CMW16GX4M2C3200C16 8GB

报告一个错误

更快的读取速度，GB/s

18.4 15.7

测试中的平均数值
更快的写入速度，GB/s

14.7 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5403-036.A00G 4GB

Corsair CMW16GX4M2C3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

15.7 18.4
写入速度，GB/s

9.8 14.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2388 3525

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3200C15-8GTZSW 8GB

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Samsung 1600 CL10 Series 8GB

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Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB