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Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA451R7AFR8N-UH 4GB

Kingston 99U5428-018.A00LF 8GB vs SK Hynix HMA451R7AFR8N-UH 4GB

总分
star star star star star
Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

总分
star star star star star
SK Hynix HMA451R7AFR8N-UH 4GB

SK Hynix HMA451R7AFR8N-UH 4GB

差异 规格 评论

差异

Kingston 99U5428-018.A00LF 8GB 需要考虑的原因
Kingston 99U5428-018.A00LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    47 left arrow 55
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.8
    测试中的平均数值
SK Hynix HMA451R7AFR8N-UH 4GB 需要考虑的原因
SK Hynix HMA451R7AFR8N-UH 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA451R7AFR8N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 55
  • 读取速度，GB/s
    12.2 left arrow 10.0
  • 写入速度，GB/s
    8.2 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2128 left arrow 2232

Kingston 99U5428-018.A00LF 8GB RAM的比较

Crucial Technology CT25664BF160BJ.M4F 2GB
Corsair CMR32GX4M4C3000C16 8GB

SK Hynix HMA451R7AFR8N-UH 4GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C19-16GTRS 16GB
G Skill Intl F4-4000C19-16GTRS 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Corsair CMK16GX4M2B4266C19 8GB
Corsair CMK16GX4M2B4266C19 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Transcend Information TS1GLH72V1H 8GB
Transcend Information TS1GLH72V1H 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Smart Modular SF4641G8CK8I6GKSEG 8GB
Smart Modular SF4641G8CK8I6GKSEG 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM