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Kingston 99U5428-046.A00LF 4GB
A-DATA Technology DDR4 2666 2OZ 4GB

Kingston 99U5428-046.A00LF 4GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
Kingston 99U5428-046.A00LF 4GB

Kingston 99U5428-046.A00LF 4GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

Kingston 99U5428-046.A00LF 4GB 需要考虑的原因
Kingston 99U5428-046.A00LF 4GB
报告一个错误
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 45
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 10.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5428-046.A00LF 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 30
  • 读取速度，GB/s
    10.1 left arrow 16.7
  • 写入速度，GB/s
    6.8 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1537 left arrow 3106

Kingston 99U5428-046.A00LF 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Kingston 99U5428-046.A00LF 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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内存RAM