Kingston 99U5428-063.A00LF 8GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB

总分

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

总分

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

差异规格评论

差异

Kingston 99U5428-063.A00LF 8GB

需要考虑的原因
Kingston 99U5428-063.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 65

左右 35% 更低的延时

Crucial Technology BLS4G4D240FSE.8FE 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB

报告一个错误

更快的读取速度，GB/s

17.5 12.2

测试中的平均数值
更快的写入速度，GB/s

8.7 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5428-063.A00LF 8GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 65
读取速度，GB/s

12.2 17.5
写入速度，GB/s

7.2 8.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2063 1921

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-2400C15-8GTZRX 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Hyundai Inc AR36C18S8K2HU416R 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208