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Kingston 99U5429-007.A00LF 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
比较
Kingston 99U5429-007.A00LF 2GB vs Crucial Technology CT8G4DFS824A.M8FH3 8GB
总分
Kingston 99U5429-007.A00LF 2GB
总分
Crucial Technology CT8G4DFS824A.M8FH3 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
更快的读取速度,GB/s
3
17
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FH3 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
75
左右 -275% 更低的延时
更快的写入速度,GB/s
8.2
2,036.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
20
读取速度,GB/s
3,986.4
17.0
写入速度,GB/s
2,036.1
8.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
714
2503
Kingston 99U5429-007.A00LF 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M378B5173EB0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Lenovo LMKU8G68AHFHD-32A 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-4GTZB 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-3733C17-16GTZR 16GB
Kingston 99U5474-010.A00LF 2GB
Samsung M471A2K43DB1-CTD 16GB
Kingston 99U5474-028.A00LF 4GB
Samsung M471A4G43BB1-CWE 32GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
报告一个错误
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Bug description
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