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Kingston 99U5429-007.A00LF 2GB
Hyundai Inc GR26C16S8K2HU416 8GB

Kingston 99U5429-007.A00LF 2GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,036.1 left arrow 13.6
    测试中的平均数值
Hyundai Inc GR26C16S8K2HU416 8GB 需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 75
    左右 -241% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Hyundai Inc GR26C16S8K2HU416 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 22
  • 读取速度，GB/s
    3,986.4 left arrow 17.4
  • 写入速度，GB/s
    2,036.1 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    714 left arrow 3182

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Hyundai Inc GR26C16S8K2HU416 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Corsair CMSX16GX4M2A2666C18 8GB
Corsair CMSX16GX4M2A2666C18 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
AMD R7416G2133U2S 16GB
AMD R7416G2133U2S 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905711-017.A00G 4GB
Kingston 9905711-017.A00G 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 99U5701-003.A00G 16GB
Kingston 99U5701-003.A00G 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston ACR32D4U2S1ME-8 8GB
Kingston ACR32D4U2S1ME-8 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM