RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 99U5429-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
比较
Kingston 99U5429-014.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
总分
Kingston 99U5429-014.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5429-014.A00LF 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
72
左右 -140% 更低的延时
更快的读取速度,GB/s
10
4.9
测试中的平均数值
更快的写入速度,GB/s
8.5
2.9
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 99U5429-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
72
30
读取速度,GB/s
4.9
10.0
写入速度,GB/s
2.9
8.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
776
2234
Kingston 99U5429-014.A00LF 4GB RAM的比较
Kingston 99U5316-033.A00LF 2GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM的比较
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JSF25664HZ-1G1F1 2GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A1K43DB2-CTD 8GB
Kingston 99U5429-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS4G4D240FSA.8FAD 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905744-006.A00G 16GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905700-013.A00G 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMR32GX4M4C3466C16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C15-16GVR 16GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Avant Technology F6451U64F9333G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMR32GX4M2F3600C18 16GB
报告一个错误
×
Bug description
Source link