Kingston 99U5429-014.A00LF 4GB vs SK Hynix HMAA2GS6CJR8N-XN 16GB

总分

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

总分

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

差异规格评论

差异

Kingston 99U5429-014.A00LF 4GB

需要考虑的原因
Kingston 99U5429-014.A00LF 4GB

报告一个错误

SK Hynix HMAA2GS6CJR8N-XN 16GB

需要考虑的原因
SK Hynix HMAA2GS6CJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

55 72

左右 -31% 更低的延时
更快的读取速度，GB/s

16 4.9

测试中的平均数值
更快的写入速度，GB/s

12.9 2.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-014.A00LF 4GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

72 55
读取速度，GB/s

4.9 16.0
写入速度，GB/s

2.9 12.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

776 2699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSEK.8FD 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

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G Skill Intl F4-3200C16-8GTZRN 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N