Kingston 99U5469-045.A00LF 4GB vs Micron Technology AFLD416EH1P 16GB

总分

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

总分

Micron Technology AFLD416EH1P 16GB

Micron Technology AFLD416EH1P 16GB

差异规格评论

差异

Kingston 99U5469-045.A00LF 4GB

需要考虑的原因
Kingston 99U5469-045.A00LF 4GB

报告一个错误

更快的写入速度，GB/s

8.3 6.9

测试中的平均数值

Micron Technology AFLD416EH1P 16GB

需要考虑的原因
Micron Technology AFLD416EH1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 -50% 更低的延时
更快的读取速度，GB/s

13.7 12.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5469-045.A00LF 4GB

Micron Technology AFLD416EH1P 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 28
读取速度，GB/s

12.8 13.7
写入速度，GB/s

8.3 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2095 2312

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology AFLD416EH1P 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT8G4DFS8213.C8FH1 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Kingston KHX1600C10D3/8GXF 8GB

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9905701-003.A00G 16GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMU32GX4M4C3000C16 8GB

Corsair CMU32GX4M4C3000C16 8GB