Kingston 99U5471-012.A00LF 4GB vs Corsair CMD16GX4M4C3200C15 4GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

差异规格评论

差异

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

Corsair CMD16GX4M4C3200C15 4GB

需要考虑的原因
Corsair CMD16GX4M4C3200C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

14.3 12.7

测试中的平均数值
更快的写入速度，GB/s

12.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00LF 4GB

Corsair CMD16GX4M4C3200C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

12.7 14.3
写入速度，GB/s

7.5 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2039 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-32GTZR 32GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT4G4DFS824A.C8FF 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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A-DATA Technology DQVE1B16 2GB

A-DATA Technology DQVE1B16 2GB

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G Skill Intl F4-3600C17-8GTZSW 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

Corsair CMZ16GX3M2A1866C9 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB