PNY Electronics PNY 2GB vs Transcend Information TS1GSH64V4B 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

更快的读取速度，GB/s

13.8 12.8

测试中的平均数值
更快的写入速度，GB/s

8.4 8.2

测试中的平均数值

Transcend Information TS1GSH64V4B 8GB

需要考虑的原因
Transcend Information TS1GSH64V4B 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Transcend Information TS1GSH64V4B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.8 12.8
写入速度，GB/s

8.4 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology BLE16G4D30AEEA.K16FB 16GB

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Samsung M393A1G40DB0-CPB 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

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Samsung M3 93T5750CZA-CE6 2GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB