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PNY Electronics PNY 2GB
Transcend Information TS1GSH64V4B 8GB

PNY Electronics PNY 2GB vs Transcend Information TS1GSH64V4B 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Differenze Specifiche tecniche Commenti

Differenze

PNY Electronics PNY 2GB Motivi da considerare
PNY Electronics PNY 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.8 left arrow 12.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.4 left arrow 8.2
    Valore medio nei test
Transcend Information TS1GSH64V4B 8GB Motivi da considerare
Transcend Information TS1GSH64V4B 8GB
Segnala un bug
  • Larghezza di banda di memoria superiore, mbps
    19200 left arrow 10600
    Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
PNY Electronics PNY 2GB
Transcend Information TS1GSH64V4B 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    27 left arrow 27
  • Velocità di lettura, GB/s
    13.8 left arrow 12.8
  • Velocità di scrittura, GB/s
    8.4 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    10600 left arrow 19200
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2274 left arrow 2148

PNY Electronics PNY 2GB Confronto tra le RAM

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Transcend Information TS1GSH64V4B 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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