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Kingston 99U5471-012.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Kingston 99U5471-012.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

总分
star star star star star
Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

差异 规格 评论

差异

Kingston 99U5471-012.A00LF 4GB 需要考虑的原因
Kingston 99U5471-012.A00LF 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.5 left arrow 6.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 41
    左右 -71% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5471-012.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 24
  • 读取速度，GB/s
    12.7 left arrow 12.7
  • 写入速度，GB/s
    7.5 left arrow 6.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2039 left arrow 2256

Kingston 99U5471-012.A00LF 4GB RAM的比较

Kingston 9905474-019.A00LF 2GB
A-DATA Technology AD5U48008G-B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM的比较

Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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