Kingston 99U5471-020.A00LF 4GB vs G Skill Intl F4-3200C15-8GTZKO 8GB

总分

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

总分

G Skill Intl F4-3200C15-8GTZKO 8GB

G Skill Intl F4-3200C15-8GTZKO 8GB

差异规格评论

差异

Kingston 99U5471-020.A00LF 4GB

需要考虑的原因
Kingston 99U5471-020.A00LF 4GB

报告一个错误

G Skill Intl F4-3200C15-8GTZKO 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKO 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

15.4 12.8

测试中的平均数值
更快的写入速度，GB/s

11.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-020.A00LF 4GB

G Skill Intl F4-3200C15-8GTZKO 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

12.8 15.4
写入速度，GB/s

8.1 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2123 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351R7EFR8C-RD 4GB

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G Skill Intl F4-4000C16-16GTRS 16GB

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Corsair CMR64GX4M8C3200C16 8GB

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Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-2400C17-4GVR 4GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C16-16GSXKB 16GB

G Skill Intl F4-3200C16-16GSXKB 16GB