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SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-4000C16-16GTRS 16GB

SK Hynix HMT351R7EFR8C-RD 4GB vs G Skill Intl F4-4000C16-16GTRS 16GB

总分
star star star star star
SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分
star star star star star
G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

差异 规格 评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB 需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB
报告一个错误
G Skill Intl F4-4000C16-16GTRS 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GTRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 37
    左右 -48% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 14900
    左右 1.14 更高的带宽

规格

完整的技术规格清单
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-4000C16-16GTRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 25
  • 读取速度，GB/s
    9.8 left arrow 18.7
  • 写入速度，GB/s
    7.2 left arrow 17.2
  • 内存带宽，mbps
    14900 left arrow 17000
Other
  • 描述
    PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-10-9-28 / 1866 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2065 left arrow 4039

SK Hynix HMT351R7EFR8C-RD 4GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
SK Hynix HMT351R7EFR4A-H9 4GB

G Skill Intl F4-4000C16-16GTRS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
G Skill Intl F4-4000C16-16GTRS 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
Kingston 9905471-076.A00LF 8GB
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Kingston KM0VW4-MID 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
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Kingston 9905678-014.A00G 4GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
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Corsair CMK32GX4M4B3200C14 8GB
内存RAM
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Nanya Technology M2Y51264TU88B0B-3C 512MB
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Samsung M393A2G40EB1-CPB 16GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
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Samsung M393A2K40CB1-CRC 16GB
内存RAM
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内存RAM
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G Skill Intl F3-1866C8-8GTX 8GB
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Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK64GX4M4A2400C14 16GB
Corsair CMK64GX4M4A2400C14 16GB
内存RAM