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Kingston 99U5471-056.A00LF 8GB
A-DATA Technology DDR4 2400 16GB

Kingston 99U5471-056.A00LF 8GB vs A-DATA Technology DDR4 2400 16GB

总分
star star star star star
Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

差异 规格 评论

差异

Kingston 99U5471-056.A00LF 8GB 需要考虑的原因
Kingston 99U5471-056.A00LF 8GB
报告一个错误
A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 41
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5471-056.A00LF 8GB
A-DATA Technology DDR4 2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 30
  • 读取速度，GB/s
    13.3 left arrow 16.8
  • 写入速度，GB/s
    8.6 left arrow 11.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2292 left arrow 3019

Kingston 99U5471-056.A00LF 8GB RAM的比较

Kingston 99U5471-037.A00LF 8GB
Kingston 9905403-500.A01LF 8GB

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Mushkin 991586 2GB
Mushkin 991586 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X8GE2400C14K4 8GB
Corsair CM4X8GE2400C14K4 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.C1GS7.DFW0C 8GB
Apacer Technology 78.C1GS7.DFW0C 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-4000C15-8GVK 8GB
G Skill Intl F4-4000C15-8GVK 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-4000C16-16GTZR 16GB
G Skill Intl F4-4000C16-16GTZR 16GB
内存RAM