Kingston 99U5474-010.A00LF 2GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

总分

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异规格评论

差异

Kingston 99U5474-010.A00LF 2GB

需要考虑的原因
Kingston 99U5474-010.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 57

左右 56% 更低的延时
更快的读取速度，GB/s

13.8 9.5

测试中的平均数值
更快的写入速度，GB/s

7.8 7.4

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-010.A00LF 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 57
读取速度，GB/s

13.8 9.5
写入速度，GB/s

7.8 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1995 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4SFS824A.M8FE 4GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Samsung M471A5644EB0-CPB 2GB

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Avant Technology W641GU42J5213NC 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB