Kingston 99U5474-013.A00LF 2GB vs Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

总分

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

总分

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

差异规格评论

差异

Kingston 99U5474-013.A00LF 2GB

需要考虑的原因
Kingston 99U5474-013.A00LF 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.3 10

测试中的平均数值
更快的写入速度，GB/s

10.8 5.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-013.A00LF 2GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

10.0 16.3
写入速度，GB/s

5.7 10.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1435 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Nanya Technology M2N1G64TUH8D5F-AC 1GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

UMAX Technology 16GB

UMAX Technology 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston KHX1600C9S3L/8G 8GB

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