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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GVS 8GB

ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-3000C15-8GVS 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
G Skill Intl F4-3000C15-8GVS 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GVS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.9 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GVS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    12.6 left arrow 18.9
  • 写入速度，GB/s
    9.5 left arrow 14.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3418

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-3000C15-8GVS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
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G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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内存RAM
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