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Kingston KF556C40-16 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Kingston KF556C40-16 16GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分
star star star star star
Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异 规格 评论

差异

Kingston KF556C40-16 16GB 需要考虑的原因
Kingston KF556C40-16 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.0 left arrow 12.1
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.9
    测试中的平均数值

规格

完整的技术规格清单
Kingston KF556C40-16 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 24
  • 读取速度，GB/s
    14.9 left arrow 15.6
  • 写入速度，GB/s
    13.0 left arrow 12.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3458 left arrow 2852

Kingston KF556C40-16 16GB RAM的比较

G Skill Intl F4-3200C16-8GVKB 8GB
Corsair CM4B16G4J2400A16K2-O 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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