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Kingston 99U5474-022.A00LF 2GB
Corsair CMD16GX4M2B2400C10 8GB

Kingston 99U5474-022.A00LF 2GB vs Corsair CMD16GX4M2B2400C10 8GB

总分
star star star star star
Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

总分
star star star star star
Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异 规格 评论

差异

Kingston 99U5474-022.A00LF 2GB 需要考虑的原因
Kingston 99U5474-022.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 4% 更低的延时
Corsair CMD16GX4M2B2400C10 8GB 需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-022.A00LF 2GB
Corsair CMD16GX4M2B2400C10 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 27
  • 读取速度，GB/s
    13.0 left arrow 18.2
  • 写入速度，GB/s
    9.5 left arrow 14.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2030 left arrow 3538

Kingston 99U5474-022.A00LF 2GB RAM的比较

Kingston 99U5474-010.A00LF 2GB
Kingston 99U5584-005.A00LF 4GB

Corsair CMD16GX4M2B2400C10 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 99U5474-022.A00LF 2GB
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Corsair CMD16GX4M2B2400C10 8GB
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内存RAM
Samsung M393B1G70QH0-YK0 8GB
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内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
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内存RAM
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G Skill Intl F4-4000C16-16GTZR 16GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Crucial Technology BLS8G4D32AESTK.M8FE 8GB
内存RAM