Kingston 99U5474-023.A00LF 4GB vs Crucial Technology CT16G4SFD824A.M16FD 16GB

总分

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

总分

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

差异规格评论

差异

Kingston 99U5474-023.A00LF 4GB

需要考虑的原因
Kingston 99U5474-023.A00LF 4GB

报告一个错误

Crucial Technology CT16G4SFD824A.M16FD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FD 16GB

报告一个错误

更快的读取速度，GB/s

14.1 12.8

测试中的平均数值
更快的写入速度，GB/s

11.0 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

12.8 14.1
写入速度，GB/s

7.5 11.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2032 2552

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology VDQVE1B16 2GB

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Corsair CM4X16GC3200C16K2E 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMK64GX4M4X4000C18 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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G Skill Intl F4-2400C16-8GIS 8GB

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Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

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Samsung M471A2K43EB1-CWE 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

V-Color Technology Inc. TA48G36S818BNK 8GB

V-Color Technology Inc. TA48G36S818BNK 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

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Corsair CMK64GX4M4B3000C15 16GB

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Nanya Technology M2F4G64CB8HB9N-CG 4GB

Kingston 99U5701-003.A00G 16GB

Kingston 99U5701-003.A00G 16GB