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Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Samsung M393B5170FH0-CK0 4GB vs Crucial Technology BLS4G4D26BFSB.8FD2 4GB

总分
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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FD2 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB

差异 规格 评论

差异

Samsung M393B5170FH0-CK0 4GB 需要考虑的原因
Samsung M393B5170FH0-CK0 4GB
报告一个错误
Crucial Technology BLS4G4D26BFSB.8FD2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 27
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    21.1 left arrow 11.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.7 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 18
  • 读取速度，GB/s
    11.8 left arrow 21.1
  • 写入速度，GB/s
    7.3 left arrow 16.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2057 left arrow 3286

Samsung M393B5170FH0-CK0 4GB RAM的比较

Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB

Crucial Technology BLS4G4D26BFSB.8FD2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Corsair MK16GX44B3000C15 4GB
Corsair MK16GX44B3000C15 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMW32GX4M4C3000C15 8GB
Corsair CMW32GX4M4C3000C15 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
V-Color Technology Inc. TC416G24D817 16GB
V-Color Technology Inc. TC416G24D817 16GB
内存RAM
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
SK Hynix HMA84GL7AMR4N-UH 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
Crucial Technology BL32G32C16U4WL.M16FB 32GB
内存RAM