Kingston 99U5474-026.A00LF 4GB vs Corsair CMV16GX4M1A2133C15 16GB

总分

Kingston 99U5474-026.A00LF 4GB

Kingston 99U5474-026.A00LF 4GB

总分

Corsair CMV16GX4M1A2133C15 16GB

Corsair CMV16GX4M1A2133C15 16GB

差异规格评论

差异

Kingston 99U5474-026.A00LF 4GB

需要考虑的原因
Kingston 99U5474-026.A00LF 4GB

报告一个错误

Corsair CMV16GX4M1A2133C15 16GB

需要考虑的原因
Corsair CMV16GX4M1A2133C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 -19% 更低的延时
更快的读取速度，GB/s

15.2 13

测试中的平均数值
更快的写入速度，GB/s

10.7 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-026.A00LF 4GB

Corsair CMV16GX4M1A2133C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 32
读取速度，GB/s

13.0 15.2
写入速度，GB/s

7.1 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2132 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston 99U5702-089.A00G 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Roa Logic BV W4U2666CX1-8G 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Samsung M393A2K40BB2-CTD 16GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2933C16-8GFX 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB