Kingston 99U5474-037.A00LF 4GB vs Corsair CMD16GX4M2B3600C18 8GB

总分

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

总分

Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

差异规格评论

差异

Kingston 99U5474-037.A00LF 4GB

需要考虑的原因
Kingston 99U5474-037.A00LF 4GB

报告一个错误

Corsair CMD16GX4M2B3600C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 37

左右 -106% 更低的延时
更快的读取速度，GB/s

20.9 13.7

测试中的平均数值
更快的写入速度，GB/s

16.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-037.A00LF 4GB

Corsair CMD16GX4M2B3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 18
读取速度，GB/s

13.7 20.9
写入速度，GB/s

7.8 16.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2102 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-8GVR 8GB

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A-DATA Technology DDR4 2133 2OZ 8GB

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Kingston KHX1866C9D3/8GX 8GB

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PUSKILL DDR3 1600 8G 8GB

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Avant Technology J641GU42J9266NL 8GB

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Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

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Corsair CMD16GX4M2B3600C18 8GB

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Micron Technology 16ATF2G64HZ-3G2J1 16GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

G Skill Intl F4-4000C15-8GTZR 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3600C16-16GVKC 16GB

G Skill Intl F4-3600C16-16GVKC 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Kingston KF3200C16D4/32GX 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB