PUSKILL DDR3 1600 8G 8GB vs Apacer Technology GD2.1527WC.001 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 15.4

测试中的平均数值
更快的写入速度，GB/s

10.0 9.0

测试中的平均数值

Apacer Technology GD2.1527WC.001 8GB

需要考虑的原因
Apacer Technology GD2.1527WC.001 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Apacer Technology GD2.1527WC.001 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

16.7 15.4
写入速度，GB/s

10.0 9.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 2520

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMA81GU6CJR8N-UH 8GB

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Apacer Technology GD2.1527WC.001 8GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BLT4G4D26AFTA.8FBD 4GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Crucial Technology CT8G4DFS6266.M4FE 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB