Kingston 99U5474-038.A00LF 4GB vs Corsair CM4X8GF2666C16K4 8GB

总分

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

差异规格评论

差异

Kingston 99U5474-038.A00LF 4GB

需要考虑的原因
Kingston 99U5474-038.A00LF 4GB

报告一个错误

Corsair CM4X8GF2666C16K4 8GB

需要考虑的原因
Corsair CM4X8GF2666C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 -43% 更低的延时
更快的读取速度，GB/s

17 12.9

测试中的平均数值
更快的写入速度，GB/s

13.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-038.A00LF 4GB

Corsair CM4X8GF2666C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 28
读取速度，GB/s

12.9 17.0
写入速度，GB/s

7.5 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2078 3250

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston X5H5PW-MIB 8GB

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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Crucial Technology BL16G32C16U4W.16FE 16GB

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Corsair CM4X8GF2400C16N2 8GB

Corsair CM4X8GF2400C16N2 8GB