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Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
比较
Kingston 99U5474-038.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
总分
Kingston 99U5474-038.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5474-038.A00LF 4GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
40
左右 -48% 更低的延时
更快的读取速度,GB/s
13.5
12.9
测试中的平均数值
更快的写入速度,GB/s
11.3
7.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
27
读取速度,GB/s
12.9
13.5
写入速度,GB/s
7.5
11.3
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2078
2430
Kingston 99U5474-038.A00LF 4GB RAM的比较
Kingston 99U5474-041.A00LF 4GB
Golden Empire CL14-14-14 D4-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N-UH 8GB RAM的比较
Kingston ACR16D3LS1NGG/2G 2GB
Kingmax Semiconductor FLGG45F-E8K3B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Samsung M471A4G43BB1-CWE 32GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
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G Skill Intl F4-3200C16-8GTZN 8GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C18-16GVK 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
报告一个错误
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Bug description
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