Kingston 99U5474-038.A00LF 4GB vs Kingston 9905633-017.A00G 8GB

总分

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分

Kingston 9905633-017.A00G 8GB

Kingston 9905633-017.A00G 8GB

差异规格评论

差异

Kingston 99U5474-038.A00LF 4GB

需要考虑的原因
Kingston 99U5474-038.A00LF 4GB

报告一个错误

Kingston 9905633-017.A00G 8GB

需要考虑的原因
Kingston 9905633-017.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 -48% 更低的延时
更快的读取速度，GB/s

13.7 12.9

测试中的平均数值
更快的写入速度，GB/s

9.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-038.A00LF 4GB

Kingston 9905633-017.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 27
读取速度，GB/s

12.9 13.7
写入速度，GB/s

7.5 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2078 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited IM44GU48N26-FFFHM 4GB

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Samsung M378B5173BH0-CH9 4GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMD8GX4M2B3000C15 4GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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G Skill Intl F4-2133C15-16GVR 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.C1GMM.AUC0B 8GB

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SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

Kingston KHX2666C16/8G 8GB

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Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 9965596-031.B00G 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

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Kingston 99U5474-028.A00LF 4GB

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EVGA 16G-D4-2400-MR 8GB

EVGA 16G-D4-2400-MR 8GB