Samsung M3 78T2953EZ3-CF7 1GB vs Corsair CMD8GX4M2B3000C15 4GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值

Corsair CMD8GX4M2B3000C15 4GB

需要考虑的原因
Corsair CMD8GX4M2B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 58

左右 -176% 更低的延时
更快的写入速度，GB/s

14.2 1,950.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD8GX4M2B3000C15 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 21
读取速度，GB/s

4,241.0 18.5
写入速度，GB/s

1,950.7 14.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

651 2930

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F4-4266C19-8GTZR 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Avant Technology J641GU42J5213N0 8GB

Avant Technology J641GU42J5213N0 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 1

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 9905633-017.A00G 8GB

Kingston 9905633-017.A00G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB