Kingston 99U5584-001.A00LF 4GB vs Crucial Technology CT16G4SFRA32A.C8FB 16GB

总分

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

总分

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

差异规格评论

差异

Kingston 99U5584-001.A00LF 4GB

需要考虑的原因
Kingston 99U5584-001.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Crucial Technology CT16G4SFRA32A.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FB 16GB

报告一个错误

更快的读取速度，GB/s

15.1 11.5

测试中的平均数值
更快的写入速度，GB/s

12.3 6.7

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

11.5 15.1
写入速度，GB/s

6.7 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1857 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Corsair CMK8GX4M1D2666C16 8GB

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Essencore Limited KD4AGU880-36A180X 16GB

Essencore Limited KD4AGU880-36A180X 16GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CM4X16GC3000C16K8 16GB

Corsair CM4X16GC3000C16K8 16GB