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Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
比较
Kingston 99U5584-004.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
总分
Kingston 99U5584-004.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5584-004.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
36
左右 25% 更低的延时
更快的读取速度,GB/s
13.1
9.3
测试中的平均数值
更快的写入速度,GB/s
7.7
7.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
36
读取速度,GB/s
13.1
9.3
写入速度,GB/s
7.7
7.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2009
1891
Kingston 99U5584-004.A00LF 4GB RAM的比较
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
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Samsung M378B1G73QH0-CK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMT64GX4M2C3600C18 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
报告一个错误
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Bug description
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