Kingston 99U5584-017.A00LF 4GB vs Corsair CMW8GX4M1Z3200C16 8GB

总分

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

总分

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

差异规格评论

差异

Kingston 99U5584-017.A00LF 4GB

需要考虑的原因
Kingston 99U5584-017.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 19% 更低的延时

Corsair CMW8GX4M1Z3200C16 8GB

需要考虑的原因
Corsair CMW8GX4M1Z3200C16 8GB

报告一个错误

更快的读取速度，GB/s

17.3 15.5

测试中的平均数值
更快的写入速度，GB/s

15.3 9.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-017.A00LF 4GB

Corsair CMW8GX4M1Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

22 27
读取速度，GB/s

15.5 17.3
写入速度，GB/s

9.8 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2510 3632

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F4-2400C15-16GTZR 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BLS8G4D240FSE.16FBR2 8GB

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Crucial Technology CT16G4SFD824A.M16FB 16GB

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Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

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Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

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Kingston 99U5584-004.A00LF 4GB

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Transcend Information JM2666HLG-16GK 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

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TwinMOS 8DHE3MN8-HATP 2GB

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB