RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 99U5595-005.A00LF 2GB
AMD R7416G2133U2S 16GB

Kingston 99U5595-005.A00LF 2GB vs AMD R7416G2133U2S 16GB

总分
star star star star star
Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

总分
star star star star star
AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

差异 规格 评论

差异

Kingston 99U5595-005.A00LF 2GB 需要考虑的原因
Kingston 99U5595-005.A00LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 78
    左右 67% 更低的延时
  • 更快的写入速度，GB/s
    7.3 left arrow 6.7
    测试中的平均数值
AMD R7416G2133U2S 16GB 需要考虑的原因
AMD R7416G2133U2S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.5 left arrow 13.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5595-005.A00LF 2GB
AMD R7416G2133U2S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 78
  • 读取速度，GB/s
    13.2 left arrow 13.5
  • 写入速度，GB/s
    7.3 left arrow 6.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1489 left arrow 1594

Kingston 99U5595-005.A00LF 2GB RAM的比较

Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.A00LF 2GB

AMD R7416G2133U2S 16GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMWX16GC3200C16W2E 16GB
Corsair CMWX16GC3200C16W2E 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Kingston 9965662-013.A01G 16GB
Kingston 9965662-013.A01G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Micron Technology AFLD416EH1P 16GB
Micron Technology AFLD416EH1P 16GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
Samsung M378A5244BB0-CRC 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM