Kingston 99U5595-005.A00LF 2GB vs Kingston HP37D4U1S8ME-8XR 8GB

总分

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

总分

Kingston HP37D4U1S8ME-8XR 8GB

Kingston HP37D4U1S8ME-8XR 8GB

差异规格评论

差异

Kingston 99U5595-005.A00LF 2GB

需要考虑的原因
Kingston 99U5595-005.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

Kingston HP37D4U1S8ME-8XR 8GB

需要考虑的原因
Kingston HP37D4U1S8ME-8XR 8GB

报告一个错误

更快的读取速度，GB/s

19.6 13.2

测试中的平均数值
更快的写入速度，GB/s

14.9 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5595-005.A00LF 2GB

Kingston HP37D4U1S8ME-8XR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.2 19.6
写入速度，GB/s

7.3 14.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1489 3266

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CK0 4GB

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G Skill Intl F4-4200C19-4GTZ 4GB

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Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CM4X32GE2666C18S2 32GB

Corsair CM4X32GE2666C18S2 32GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB