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Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CT8G4DFRA266.C8FB 8GB

Kingston ACR16D3LFS1KBG/2G 2GB vs Crucial Technology CT8G4DFRA266.C8FB 8GB

总分
star star star star star
Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

总分
star star star star star
Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

差异 规格 评论

差异

Kingston ACR16D3LFS1KBG/2G 2GB 需要考虑的原因
Kingston ACR16D3LFS1KBG/2G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
Crucial Technology CT8G4DFRA266.C8FB 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 7.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 4.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LFS1KBG/2G 2GB
Crucial Technology CT8G4DFRA266.C8FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    7.1 left arrow 16.5
  • 写入速度，GB/s
    4.2 left arrow 12.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    969 left arrow 3013

Kingston ACR16D3LFS1KBG/2G 2GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A1G43EB1-CPB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM