RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
A-DATA Technology DDR4 3300 2OZ 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs A-DATA Technology DDR4 3300 2OZ 4GB

总分
star star star star star
Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

总分
star star star star star
A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

差异 规格 评论

差异

Nanya Technology M2F4GH64CB8HB6N-CG 4GB 需要考虑的原因
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
报告一个错误
A-DATA Technology DDR4 3300 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    22 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 7.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 17
  • 读取速度，GB/s
    12.3 left arrow 22.0
  • 写入速度，GB/s
    7.1 left arrow 17.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1952 left arrow 3731

Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM的比较

SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

A-DATA Technology DDR4 3300 2OZ 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston K9CXF2-MIE 8GB
Kingston K9CXF2-MIE 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Samsung M378B5173EB0-YK0 4GB
Samsung M378B5173EB0-YK0 4GB
Kingston 9965596-002.B00G 4GB
Kingston 9965596-002.B00G 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9965690-002.A00G 8GB
Kingston 9965690-002.A00G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
内存RAM