Kingston ACR16D3LS1KBG/8G 8GB vs G Skill Intl F4-2666C16-8GRB 8GB

总分

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

总分

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

差异规格评论

差异

Kingston ACR16D3LS1KBG/8G 8GB

需要考虑的原因
Kingston ACR16D3LS1KBG/8G 8GB

报告一个错误

G Skill Intl F4-2666C16-8GRB 8GB

需要考虑的原因
G Skill Intl F4-2666C16-8GRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 50

左右 -52% 更低的延时
更快的读取速度，GB/s

16.1 10.6

测试中的平均数值
更快的写入速度，GB/s

12.1 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-2666C16-8GRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

50 33
读取速度，GB/s

10.6 16.1
写入速度，GB/s

7.8 12.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1899 3157

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Maxsun MSD416G26Q3 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BLS16G4D26BFSE.16FD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1