RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston ACR16D3LS1KBG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston ACR16D3LS1KBG/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异 规格 评论

差异

Kingston ACR16D3LS1KBG/8G 8GB 需要考虑的原因
Kingston ACR16D3LS1KBG/8G 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 50
    左右 -108% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1KBG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 24
  • 读取速度，GB/s
    10.6 left arrow 16.0
  • 写入速度，GB/s
    7.8 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1899 left arrow 2925

Kingston ACR16D3LS1KBG/8G 8GB RAM的比较

Crucial Technology CT102464BF160B.T16 8GB
Corsair CMW64GX4M4Z2933C16 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston MSI24D4D4S8MB-8 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-2400C15-8GFT 8GB
G Skill Intl F4-2400C15-8GFT 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
G Skill Intl F4-4133C19-8GTZKWC 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM