Kingston ACR16D3LS1KBG/8G 8GB vs Team Group Inc. DDR4 2800 8GB

总分

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

总分

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB

差异规格评论

差异

Kingston ACR16D3LS1KBG/8G 8GB

需要考虑的原因
Kingston ACR16D3LS1KBG/8G 8GB

报告一个错误

Team Group Inc. DDR4 2800 8GB

需要考虑的原因
Team Group Inc. DDR4 2800 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 50

左右 -85% 更低的延时
更快的读取速度，GB/s

14.6 10.6

测试中的平均数值
更快的写入速度，GB/s

11.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KBG/8G 8GB

Team Group Inc. DDR4 2800 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

50 27
读取速度，GB/s

10.6 14.6
写入速度，GB/s

7.8 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1899 2890

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Apacer Technology 76.D105G.D090B 16GB

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SK Hynix HMT325S6EFR8A-PB 2GB

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Crucial Technology BL32G32C16U4BL.M16FB 32GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT32G4SFD832A.M16FB 32GB

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Samsung M378B2873GB0-CH9 1GB

Samsung M378B2873GB0-CH9 1GB

Samsung M378B2873FH0-CH9 1GB

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Samsung M393B5170GB0-CK0 4GB

Samsung M393B5170GB0-CK0 4GB

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

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Team Group Inc. DDR4 3000 4GB

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