Kingston ACR16D3LS1KNG/4G 4GB vs Corsair CMW16GX4M2Z3600C18 8GB

总分

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

总分

Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB

报告一个错误

Corsair CMW16GX4M2Z3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2Z3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 -3% 更低的延时
更快的读取速度，GB/s

18.2 12.5

测试中的平均数值
更快的写入速度，GB/s

15.4 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/4G 4GB

Corsair CMW16GX4M2Z3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 29
读取速度，GB/s

12.5 18.2
写入速度，GB/s

7.8 15.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1917 3559

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Absolute Latency

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最新比较

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

Corsair CMW16GX4M2Z3600C18 8GB

Corsair CMW16GX4M2Z3600C18 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Corsair CM4X8GD3000C16K4 8GB

Corsair CM4X8GD3000C16K4 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2400C15-8GVR 8GB

G Skill Intl F4-2400C15-8GVR 8GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3200C16-8GVKB 8GB

G Skill Intl F4-3200C16-8GVKB 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB

InnoDisk Corporation M4S0-AGS1O5IK 16GB