Kingston ACR16D3LS1KNG/4G 4GB vs Samsung M393A2K43BB1-CRCA1 16GB

总分

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

总分

Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 56

左右 46% 更低的延时
更快的读取速度，GB/s

12.5 7.5

测试中的平均数值
更快的写入速度，GB/s

7.8 4.4

测试中的平均数值

Samsung M393A2K43BB1-CRCA1 16GB

需要考虑的原因
Samsung M393A2K43BB1-CRCA1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/4G 4GB

Samsung M393A2K43BB1-CRCA1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 56
读取速度，GB/s

12.5 7.5
写入速度，GB/s

7.8 4.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1917 1598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Hexon Technology Pte Ltd HEXON 1GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-3000C16-8GTRG 8GB