Kingston ACR16D3LS1KNG/4G 4GB vs Samsung M471A1G44BB0-CWE 8GB

总分

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

总分

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 50% 更低的延时

Samsung M471A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 12.5

测试中的平均数值
更快的写入速度，GB/s

11.0 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/4G 4GB

Samsung M471A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 60
读取速度，GB/s

12.5 15.3
写入速度，GB/s

7.8 11.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1917 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M2K4133C19 8GB

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Corsair CM4B8G1J2400A16K2-ON 8GB