RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR16D3LS1KNG/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
比较
Kingston ACR16D3LS1KNG/4G 4GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
总分
Kingston ACR16D3LS1KNG/4G 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
34
左右 12% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
报告一个错误
更快的读取速度,GB/s
20.3
12.5
测试中的平均数值
更快的写入速度,GB/s
13.4
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Kingston ACR16D3LS1KNG/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
34
读取速度,GB/s
12.5
20.3
写入速度,GB/s
7.8
13.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1917
3343
Kingston ACR16D3LS1KNG/4G 4GB RAM的比较
Samsung M471A5143EB1-CRC 4GB
Kingston MSI16D3LS1KBG/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-1333C9-4GIS 4GB
Mushkin MRA4S320GJJM32G 32GB
Kingston ACR16D3LS1KNG/4G 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMW32GX4M4K4000C19 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9905678-043.A00G 8GB
Kingston 99U5471-020.A00LF 4GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMT16GX4M2C3466C16 8GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-2133C15-4GRS 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Crucial Technology CT51264BA160B.C16F 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston 9905702-002.A00G 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
报告一个错误
×
Bug description
Source link