Kingston ACR16D3LS1KNG/8G 8GB vs Crucial Technology BL8G32C16U4WL.M8FE1 8GB

总分

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

总分

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/8G 8GB

需要考虑的原因
Kingston ACR16D3LS1KNG/8G 8GB

报告一个错误

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

21.2 9.7

测试中的平均数值
更快的写入速度，GB/s

16.4 5.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/8G 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

9.7 21.2
写入速度，GB/s

5.2 16.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1731 3755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Essencore Limited KD44GU481-26N1600 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

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Samsung M471B5273DH0-CH9 4GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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