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Kingston ACR16D3LS1KNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Kingston ACR16D3LS1KNG/8G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

差异 规格 评论

差异

Kingston ACR16D3LS1KNG/8G 8GB 需要考虑的原因
Kingston ACR16D3LS1KNG/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.2 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 5.2
    测试中的平均数值

规格

完整的技术规格清单
Kingston ACR16D3LS1KNG/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    9.7 left arrow 11.2
  • 写入速度，GB/s
    5.2 left arrow 7.6
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1731 left arrow 2026

Kingston ACR16D3LS1KNG/8G 8GB RAM的比较

Wilk Elektronik S.A. GR1600S3V64L11/8G 8GB
Kingston KGTWW1-MIE 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB RAM的比较

SK Hynix HMT451S6BFR8A-PB 4GB
NXP (Philips) HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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