Kingston ACR16D3LS1NGG/2G 2GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

OCMEMORY OCM2933CL16-16GBH 16GB

需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB

报告一个错误

低于PassMark测试中的延时，ns

59 84

左右 -42% 更低的延时
更快的读取速度，GB/s

20.1 5

测试中的平均数值
更快的写入速度，GB/s

10.6 3.6

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

OCMEMORY OCM2933CL16-16GBH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 59
读取速度，GB/s

5.0 20.1
写入速度，GB/s

3.6 10.6
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

878 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

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Chun Well Technology Holding Limited CL18-22-22 D4-3600

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Samsung M378B5673FH0-CH9 2GB

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Kingston X3XCFP-HYA 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Kingston KVR16N11/8-SP 8GB

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Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

Wilk Elektronik S.A. GY2133D464L15S/4G 4GB

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Kingston X2YH1K-MIE-NX 16GB